Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge
نویسندگان
چکیده
منابع مشابه
Structural and electronic properties of epitaxial graphene on SiC(0001): A review of growth, characterization, transfer doping and hydrogen intercalation
Graphene, a monoatomic layer of graphite hosts a two-dimensional electron gas system with large electron mobilities which makes it a prospective candidate for future carbon nanodevices. Grown epitaxially on silicon carbide (SiC) wafers, large area graphene samples appear feasible and integration in existing device technology can be envisioned. This article reviews the controlled growth of epita...
متن کاملEpitaxial graphene on SiC(0001): more than just honeycombs.
Using scanning tunneling microscopy with Fe-coated W tips and first-principles calculations, we show that the interface of epitaxial graphene/SiC(0001) is a warped graphene layer with hexagon-pentagon-heptagon (H(5,6,7)) defects that break the honeycomb symmetry, thereby inducing a gap and states below E(F near the K point. Although the next graphene layer assumes the perfect honeycomb lattice,...
متن کاملAtomic and electronic structure of trilayer graphene/SiC(0001): Evidence of Strong Dependence on Stacking Sequence and charge transfer
The transport properties of few-layer graphene are the directly result of a peculiar band structure near the Dirac point. Here, for epitaxial graphene grown on SiC, we determine the effect of charge transfer from the SiC substrate on the local density of states (LDOS) of trilayer graphene using scaning tunneling microscopy/spectroscopy and angle resolved photoemission spectroscopy (ARPES). Diff...
متن کاملCharge neutrality and band-gap tuning of epitaxial graphene on SiC by molecular doping
Epitaxial graphene on SiC 0001 suffers from strong intrinsic n-type doping. We demonstrate that the excess negative charge can be fully compensated by noncovalently functionalizing graphene with the strong electronacceptor tetrafluorotetracyanoquinodimethane F4-TCNQ . Charge neutrality can be reached in monolayer graphene as shown in electron-dispersion spectra from angular-resolved photoemissi...
متن کاملThe physics of epitaxial graphene on SiC(0001).
Various physical properties of epitaxial graphene grown on SiC(0001) are studied. First, the electronic transport in epitaxial bilayer graphene on SiC(0001) and quasi-free-standing bilayer graphene on SiC(0001) is investigated. The dependences of the resistance and the polarity of the Hall resistance at zero gate voltage on the top-gate voltage show that the carrier types are electron and hole,...
متن کامل